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2SB1054
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2SB1054

SKU: 2SB1054
2SB1054 Transistor Silicon PNP CASE: TO126 MAKE: Matsushita Electronics
Datasheet
2SB1054 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Matsushita Electronics
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 200
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 116500
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