2SB1057

SKU: 2SB1057

2SB1057 Transistor Silicon PNP CASE: SOT199 MAKE: Matsushita Electronics

Datasheet

2SB1057 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT199
Manufacturer	Matsushita Electronics
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	100
Derate (Amb) (W/°C)	800m
Max. hFE	200
Min hFE	40
Ic Max. (A)	9.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	130 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	9 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	120
SKU	343353

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