| 2SB1059 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | TO92 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 70 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 750m | |
| C(ob) (F) | 35p | |
| hfe | 100 | |
| Ic Max. (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 1u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 65M | |
| @VCE (test) (V) | 55i | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 0 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 70 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 165 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 200 | |
| SKU | 116502 | |