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2SB1062
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2SB1062

SKU: 2SB1062
2SB1062 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics
Datasheet
2SB1062 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT33
Manufacturer Matsushita Electronics
Vbr CBO 15
Vbr CEO 10
Max. PD (W) 600m
C(ob) (F) 22p
Derate (Amb) (W/°C) 4.8m
hfe 350=
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 500m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 165 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 116504
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