2SB1066M

2SB1066M

SKU: 2SB1066M
2SB1066M Transistor Silicon PNP CASE: Standard MAKE: Rohm Semiconductor
Datasheet
2SB1066M Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Rohm Semiconductor
Vbr CEO 50
Max. PD (W) 1.0
Max. hFE 390
Min hFE 82
Ic Max. (A) 3.0
Polarity PNP
Trans. Freq (Hz) Min. 70M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SKU 343355
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