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2SB1070A
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2SB1070A

SKU: 2SB1070A
2SB1070A Transistor Silicon PNP CASE: TO252 MAKE: Matsushita Electronics
Datasheet
2SB1070A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 1.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 768177
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