2SB1072S

SKU: 2SB1072S

2SB1072S Transistor Silicon PNP CASE: TO252 MAKE: Hitachi

Datasheet

2SB1072S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO252
Manufacturer	Hitachi
Vbr CEO	80
Max. PD (W)	20
t(f) Max. (S)	1.0u-
Max. hFE	20k
Min hFE	1.0k
Ic Max. (A)	4.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	PNP
Tr Max. (s)	0.5u-
t(stor) Max. (S)	1.5u-
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	4-33
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	1000
SKU	343358

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