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2SB1103
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2SB1103

SKU: 2SB1103
2SB1103 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Datasheet
2SB1103 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 40
t(f) Max. (S) 1.0u-+
Max. hFE 20k
Min hFE 1k
Ic Max. (A) 8
@Ic (test) (A) 0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 0.5u-
Oper. Temp (°C) Max. 140
@VCE (V) 60i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 343370
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