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2SB1106
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2SB1106

SKU: 2SB1106
2SB1106 Transistor Silicon PNP CASE: SOT78 MAKE: Hitachi
Datasheet
2SB1106 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT78
Manufacturer Hitachi
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 40
t(f) Max. (S) 1.0u-+
Max. hFE 20k
Min hFE 1k
Ic Max. (A) 6
@Ic (test) (A) 0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 0.5u-
Oper. Temp (°C) Max. 140
@VCE (V) 120i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 343373
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