2SB1108

SKU: 2SB1108

2SB1108 Transistor Silicon PNP CASE: SOT186 MAKE: Matsushita Electronics

Datasheet

2SB1108 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT186
Manufacturer	Matsushita Electronics
Vbr CEO	120
Max. PD (W)	50
Max. hFE	20k
Min hFE	1.0k
Ic Max. (A)	8.0
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	PNP
Derate Above 25°C	400m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	5000
SKU	343374

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