2SB1110

SKU: 2SB1110

2SB1110 Transistor Silicon PNP CASE: TO126 MAKE: Hitachi

Datasheet

2SB1110 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Hitachi
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	1.2
Max. hFE	320
Min hFE	60
Ic Max. (A)	100m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	140M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	5.5 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	343375

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