2SB1110D
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2SB1110D

SKU: 2SB1110D
2SB1110D Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Polarity PNP
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 5.5 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 1422346
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