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2SB1112
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2SB1112

SKU: 2SB1112
2SB1112 Transistor Silicon PNP CASE: TO126 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Hitachi
Polarity PNP
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 768143
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