The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB1114
View detailed images (12)

2SB1114

SKU: 2SB1114
2SB1114 Transistor - CASE: SOT89 MAKE: NEC
+ VAT 20% for UK purchases
Datasheet
2SB1114 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer NEC
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 2.0
Max. hFE 600
Min hFE 135
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 195 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code ZK_ZL_ZM
SKU 343376
Back