The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1114

2SB1114

SKU: 2SB1114
2SB1114 Transistor Silicon PNP CASE: SOT89 MAKE: NEC
Datasheet
2SB1114 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT89
Manufacturer NEC
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 2.0
Max. hFE 600
Min hFE 135
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 195 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code ZK_ZL_ZM
SKU 343376
Back