2SB1125

SKU: 2SB1125

2SB1125 SI-PNP-DARL - Case: SOT89 Make: Sanyo Semiconductor

Datasheet

2SB1125 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP Darlington
Case	SOT89
Manufacturer	Sanyo Semiconductor
Vbr CEO	50
Max. PD (W)	500m
Min hFE	3.0k
Ic Max. (A)	700m
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Mat.	Silicon Logic
Polarity	PNP
Trans. Freq (Hz) Min.	170M
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-1
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	9 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	5
SMD Transistor Code	BH
SKU	343387

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