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2SB1126
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2SB1126

SKU: 2SB1126
2SB1126 Transistor Silicon PNP Darlington CASE: SOT89 MAKE: Sanyo Semiconductor
Datasheet
2SB1126 Datasheet
Product specifications
Type Transistor Silicon PNP Darlington
Case SOT89
Manufacturer Sanyo Semiconductor
Vbr CEO 50
Max. PD (W) 500m
Min hFE 4.0k
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-1
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 4
SMD Transistor Code BI
SKU 343388
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