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2SB1130AM
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2SB1130AM

SKU: 2SB1130AM
2SB1130AM Transistor Silicon PNP CASE: Standard MAKE: Generic
Datasheet
2SB1130AM Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer ROHM
Vbr CEO 160
Max. PD (W) 1.0
Max. hFE 270
Min hFE 56
Ic Max. (A) 1.5
Polarity PNP
Trans. Freq (Hz) Min. 50M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SKU 343391
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