| Weight |
0.01 kg
|
| Equivalent |
2SB1132 |
| Type |
Transistor Silicon PNP |
| Case |
SOT89 |
| Manufacturer |
Rohm Semiconductor |
| Vbr CEO |
32 |
| Max. PD (W) |
500m |
| Max. hFE |
390 |
| Min hFE |
82 |
| Ic Max. (A) |
1.0 |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
150M |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.5 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
20 pF |
| Transition Frequency (ft): |
150 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
82 |
| SMD Transistor Code |
BAP_BAQ_BAR |
| SKU |
568482 |