The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB1137
View detailed images (12)

2SB1137

SKU: 2SB1137
2SB1137 SemiConductor - Case: TO218 Make: NEC
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer NEC
Vbr CEO 100
Max. PD (W) 65
t(f) Max. (S) 2.0u-
Max. hFE 30k
Min hFE 1.0k
Ic Max. (A) 10
@Ic (test) (A) 10
Mat. Silicon Logic
Polarity PNP
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 65 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 6000
SKU 768116
Back