| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO126F |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
60 |
| Vbr CEO |
50 |
| Max. PD (W) |
10 |
| t(f) Max. (S) |
30n |
| Max. hFE |
560 |
| Min hFE |
100 |
| Ic Max. (A) |
2.5 |
| @Ic (test) (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Tr Max. (s) |
35n |
| Trans. Freq (Hz) Min. |
140M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
2.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
2.5 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
25 pF |
| Transition Frequency (ft): |
140 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
85349 |