2SB1147

SKU: 2SB1147

2SB1147 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CEO	120
Max. PD (W)	25
t(f) Max. (S)	1.5u-
Max. hFE	20k
Min hFE	1.0k
Ic Max. (A)	8.0
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	PNP
Tr Max. (s)	0.5u-
t(stor) Max. (S)	1.6u-
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	5000
SKU	768108

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