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2SB1150
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2SB1150

SKU: 2SB1150
2SB1150 Transistor - Case: TO126 Make: NEC
+ VAT 20% for UK purchases
Datasheet
2SB1150 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer NEC
Vbr CEO 60
Max. PD (W) 15
Max. hFE 30k
Min hFE 2.0k
Ic Max. (A) 3.0
@Ic (test) (A) 1.5
Mat. Silicon Logic
Polarity PNP
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 10000
SKU 343399
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