2SB1160
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2SB1160

SKU: 2SB1160
2SB1160 Transistor Silicon PNP CASE: SOT199 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case SOT199
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 9 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 90
SKU 550261
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