The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
2SB1167
View detailed images (13)

2SB1167

SKU: 2SB1167
2SB1167 Transistor - Case: TO126 Make: Sanyo Semiconductor
+ VAT 20% for UK purchases
Datasheet
2SB1167 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Sanyo Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 20
t(f) Max. (S) 50n
Max. hFE 400
Min hFE 70
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 117004
Back