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2SB1167T
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2SB1167T

SKU: 2SB1167T
2SB1167T Transistor Silicon PNP CASE: SOT82 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case SOT82
Manufacturer Sanyo Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 20
t(f) Max. (S) 50n
Max. hFE 400
Min hFE 200
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 572253
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