The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1183
View detailed images (12)

2SB1183

SKU: 2SB1183
2SB1183 Transistor Silicon PNP CASE: TO218 MAKE: Rohm Semiconductor
Datasheet
2SB1183 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Rohm Semiconductor
Vbr CEO 40
Max. PD (W) 1.0
Max. hFE 200k
Min hFE 1.0k
Ic Max. (A) 2.0
Mat. Silicon Logic
Polarity PNP
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 20000
SKU 343407
Back