2SB1193
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2SB1193

SKU: 2SB1193
2SB1193 Transistor Silicon PNP CASE: SOT186 MAKE: Matsushita Electronics
Datasheet
2SB1193 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 343409
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