The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB119A
View detailed images (13)

2SB119A

SKU: 2SB119A
2SB119A Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB119
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 30
Min hFE 6.0
Ic Max. (A) 3.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) .20m
Polarity PNP
Derate Above 25°C 588m
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 75
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 550264
Back