2SB120

SKU: 2SB120

2SB120 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Fujitsu
Vbr CBO	32
Max. PD (W)	150m
Derate (Amb) (W/°C)	2.5m
hfe	70
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	6.5u
Polarity	PNP
Trans. Freq (Hz) Min.	.70M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	100
@Ic (A)	2.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	540054

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