2SB1207

SKU: 2SB1207

2SB1207 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SB1207 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	15
Vbr CEO	10
Max. PD (W)	300m
C(ob) (F)	22p
Derate (Amb) (W/°C)	2.4m
hfe	100
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	90M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	500m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	160 °C
Forward Current Transfer Ratio (hFE), MIN	150
SKU	343416

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