2SB1208

SKU: 2SB1208

2SB1208 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SB1208 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	20
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Min hFE	70
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	120M-
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	165 °C
Forward Current Transfer Ratio (hFE), MIN	140
SMD Transistor Code	K
SKU	550265

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