2SB1209

SKU: 2SB1209

2SB1209 Transistor Silicon PNP CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SB1209 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	400
Vbr CEO	400
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Min hFE	80
Ic Max. (A)	100m
Polarity	PNP
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	400 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343417

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