2SB121

SKU: 2SB121

2SB121 Transistor Germanium PNP CASE: TO1 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Fujitsu
Vbr CBO	105
Vbr CEO	60
Max. PD (W)	50m
C(ob) (F)	8.0p
Derate (Amb) (W/°C)	833u
hfe	60
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	14u
Polarity	PNP
Trans. Freq (Hz) Min.	.50M
@VCE (test) (V)	.35
Oper. Temp (°C) Max.	100
@Ic (A)	5.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.05 W
Maximum Collector-Base Voltage \|Vcb\|	105 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	50 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	16 pF
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	540055

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