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2SB1218
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2SB1218

SKU: 2SB1218
2SB1218 Transistor Silicon PNP CASE: TO236 MAKE: Matsushita Electronics
Datasheet
2SB1218 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Matsushita Electronics
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 2.7p
Derate (Amb) (W/°C) 1.2m
hfe 160
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 20M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 195 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 767937
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