2SB1218A

SKU: 2SB1218A

2SB1218A Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics

Datasheet

2SB1218A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	Matsushita Electronics
Vbr CBO	45
Vbr CEO	45
Max. PD (W)	150m
C(ob) (F)	2.7p
Derate (Amb) (W/°C)	1.2m
hfe	160
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	20M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	195 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SMD Transistor Code	B
SKU	343421

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