2SB122

SKU: 2SB122

2SB122 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Toshiba
Vbr CBO	80
Max. hFE	110
Min hFE	34
Ic Max. (A)	1.5
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	PNP
R(sat) (Û)	.15
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	250k
Oper. Temp (°C) Max.	75
@VCE (V)	1.5i
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	584629

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