2SB1221

SKU: 2SB1221

2SB1221 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SB1221 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	250
Vbr CEO	200
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	220
Min hFE	30
Ic Max. (A)	70m
@Ic (test) (A)	5.0m
Icbo Max. @Vcb Max. (A)	2.0u
Polarity	PNP
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	250 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.07 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	116519

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