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2SB1225
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2SB1225

SKU: 2SB1225
2SB1225 Transistor Silicon PNP CASE: SOT186A MAKE: Sanyo Semiconductor
Datasheet
2SB1225 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186A
Manufacturer Sanyo Semiconductor
Vbr CEO 60
Max. PD (W) 30
t(f) Max. (S) 1.8u
Max. hFE 5.0k-
Min hFE 2.0k
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
Tr Max. (s) 600n
t(stor) Max. (S) 3.0u
Trans. Freq (Hz) Min. 20M
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 343426
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