The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB125
View detailed images (1)

2SB125

SKU: 2SB125
2SB125 Transistor Germanium PNP CASE: TO53 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO53
Manufacturer Toshiba
Vbr CBO 36
Min hFE 70-
Ic Max. (A) 15
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
R(sat) (Û) .02
Derate Above 25°C 833m
Trans. Freq (Hz) Min. 300k
Oper. Temp (°C) Max. 75
@VCE (V) 1.5i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 41 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.18 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 767871
Back