2SB1250
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2SB1250

SKU: 2SB1250
2SB1250 Transistor Silicon PNP CASE: SOT186 MAKE: Matsushita Electronics
Datasheet
2SB1250 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 15000
SKU 343438
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