The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1251

2SB1251

SKU: 2SB1251
2SB1251 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics
Datasheet
2SB1251 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Matsushita Electronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 15000
SKU 343439
Back