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2SB1260
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2SB1260

SKU: 2SB1260
2SB1260 Transistor Silicon PNP CASE: SP0 MAKE: Rohm Semiconductor
Datasheet
2SB1260 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SP0
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 2.0
Max. hFE 390
Min hFE 82
Ic Max. (A) 1.0
Polarity PNP
Trans. Freq (Hz) Min. 100M
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SMD Transistor Code BHP_BHQ_BHR
SKU 343444
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