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2SB1264
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2SB1264

SKU: 2SB1264
2SB1264 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics
Datasheet
2SB1264 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 250
Vbr CEO 200
Max. PD (W) 600m
C(ob) (F) 10p
Derate (Amb) (W/°C) 4.8m
hfe 30
Ic Max. (A) 70m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 5.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 165 °C
Forward Current Transfer Ratio (hFE), MIN 140
SKU 116525
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