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2SB1267S
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2SB1267S

SKU: 2SB1267S
2SB1267S Transistor Silicon PNP CASE: TO262 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO262
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 30
t(f) Max. (S) 30n
Max. hFE 280
Min hFE 140
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 572263
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