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2SB126A
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2SB126A

SKU: 2SB126A
2SB126A Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB126
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 16
Max. PD (W) 30
Max. hFE 50
Min hFE 15
Ic Max. (A) 3.5
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 220u
Polarity PNP
Derate Above 25°C 667m
Trans. Freq (Hz) Min. 6.0k
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.06 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 550267
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