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2SB127
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2SB127

SKU: 2SB127
2SB127 Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 32
Vbr CEO 16
Max. hFE 100
Min hFE 26
Ic Max. (A) 3.5
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 220u
Polarity PNP
Derate Above 25°C 667m
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.06 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 549753
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