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2SB1287
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2SB1287

SKU: 2SB1287
2SB1287 Transistor Silicon PNP CASE: SOT186 MAKE: Rohm Semiconductor
Datasheet
2SB1287 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT186
Manufacturer Rohm Semiconductor
Vbr CEO 100
Max. PD (W) 20
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 567963
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