2SB128A

2SB128A

SKU: 2SB128A
2SB128A Transistor Germanium PNP CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SB128
Type Transistor Germanium PNP
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 120
Vbr CEO 60
Max. hFE 36
Min hFE 16
Ic Max. (A) 6.0
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) .22m
Polarity PNP
Derate Above 25°C 667m
Oper. Temp (°C) Max. 100
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 60 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.06 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 550281
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