The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB1290

2SB1290

SKU: 2SB1290
2SB1290 Transistor Silicon PNP CASE: TO220 MAKE: Rohm Semiconductor
Datasheet
2SB1290 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 30
Max. hFE 320
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Polarity PNP
Trans. Freq (Hz) Min. 12M
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343458
Back