2SB1297

SKU: 2SB1297

2SB1297 Transistor Silicon PNP CASE: TO92 MAKE: Matsushita Electronics

Datasheet

2SB1297 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	360
Min hFE	90
Ic Max. (A)	500m
@Ic (test) (A)	150m
Polarity	PNP
Trans. Freq (Hz) Min.	250M-
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	185 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	116530

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